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 BC856 SERIES
DATA SHEET
PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts
FEATURES
General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking :
B C 856A =56A B C 856B =56B
B C 857A =57A B C 857B =57B B C 857C =57C
B C 858A =58A B C 858B =58B B C 858C =58C B C 859B =59B B C 859C =59C
Top View
3 Collector
3 COLLECTOR
1 BASE
1 Base
2 Emitter
2 EMITTER
ABSOLUTE MAXIMUM RATINGS
PA RA M E TE R C o lle c to r-E mi tte r Vo lta g e C o lle c to r-B a s e Vo lta g e E mi tte r-B a s e Vo lta g e C o l l e c t o r C ur r e nt - C o nt i nuo us Ma x P o we r D i s s i p a ti o n (No te 1 ) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L V CEO V CBO V EBO IC P TOT TJ , T S TG
BC856 -65 -80
BC857 -45 -50 -5 -100 225
BC858
BC859 -30 -30
U N IT S V V V mA mW
- 5 0 TO + 1 5 0
O
C
REV.0.1-FEB.9.2009
PAGE . 1
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance , Junction to Ambient
SYMBOL RJA
Value 556
UNIT
O
C /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
EL ECTRICAL CHARACTERISTICS (TJ =25 C, unless otherwise noted)
PARAMETER Collector - Emitter Breakdown Voltage (I C =-10mA, IB =0) BC856A,B BC857A,B,C V(BR)CEO BC858A,B,C, BC859B,C Collector - Base Breakdown Voltage (I C =-10A, IE=0) BC856A,B BC857A,B,C V(BR)CBO BC858A,B,C, BC859B,C Emitter - Base Breakdown Voltage (I E=-1A, IC =0) V(BR)EBO I EBO SYMBOL MIN. -65 -45 -30 -80 -50 -30 -5.0 T J=150 OC DC Current Gain (I C =-10A, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C h FE (I C =-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector - Emitter Saturation Voltage (IC =-10mA, I B =-0.5mA) VCE(SAT) (I C =-100mA, I B =-5.0mA) Base - Emitter Saturation Voltage (IC =-10mA, IB =-0.5mA) VBE(SAT) (I C =-100mA, I B =-5.0mA) Base - Emitter On Voltage (IC =-2.0mA, VCE=-5.0V) VBE(ON) (I C =-10mA, VCE=-5.0V) Collector - Base Capacitance Current-Gain - Bandwidth Product FT (I C =-10mA, VCE=-5.0V, f=100MHz)
REV.0.1-FEB.9.2009 PAGE . 2
TYP. 90 150 270
MAX. -100 -15 -4.0 -
UNIT
V
V
V nA nA uA
Emitter-Base Cutoff Current (VEB =-5V) Collector-Base Cutoff Current (VCB =-30V, IE=0)
I CBO -
110 200 420 -0.60 180 290 520 -0.7 -0.9 220 450 800 -0.3 V -0.65 V -0.75 V -0.82 4.5 pF
(VCB =-10V, IE=0, f=1MHz)
CCB
-
-
200
-
MHz
BC856 SERIES
ELECTRICAL CHARACTERISTICS CURVES
600
T J=150 C
O
0.9 0.8 0.7
T J=25 C
O
500 400
hFE
V BE(ON)(V)
T J=100 C
O
0.6 0.5 0.4 0.3
T J=15 C
O
300
T J=25 OC
T J=100 OC
200 100 0 0.01
V CE=-5V
0.2 0.1
VCE = -5V
0.1
1
10
100
0 0.01
0.1
1
10
100
Collector Current,I C(mA)
Collector Current, I C(mA)
Fig.1- TYPICAL h FE vs. Collector Current
Fig.2- TYPICAL V BE(ON) vs. Collector Current
0.3 0.25
Capacitance,C(pF)
14 12
CIB (EB)
10 8 6 4 2
COB (BC)
V CE(SAT)(V)
0.2 0.15
T J=150 C
O
T J=100 OC
0.1 0.05 0 0.01
T J=25 OC
0.1
1
10
100
0 0.1
1
10
100
Collector Current,I C(mA)
Reverse Voltage,V R(V)
Fig.3- TYPICAL V CE(SAT) vs. Collector Current
Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE
REV.0.1-FEB.9.2009
PAGE . 3
BC856 SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel
LEGAL STATEMENT Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.9.2009
PAGE . 4


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